This inventor holds 4 USPTO granted patents and 1 EPO patent. Top assignees: International Business Machines Corporation, Infineon Technologies North America Corp.. Active years: 1996-2002.
Location History:
- Danbury, CT (US) (1996)
- Austin, TX (US) (2000 - 2002)
Company Filing History:
4 out of 166,209 
1 out of 244 
Years Active: 1996-2002
Title: Innovative Contributions of Farid Agahi in Memory Device Technology
Introduction
Farid Agahi, a notable inventor based in Austin, TX, has made significant strides in the field of memory device technology. With a total of four patents to his name, Agahi's innovations focus primarily on enhancing memory storage and signal transfer capabilities in DRAM (Dynamic Random Access Memory) cells.
Latest Patents
Among his latest contributions, Agahi has developed a patented technology for manufacturing a DRAM cell featuring an annular signal transfer region. This innovative memory device is constructed within a substrate that includes a trench characterized by side walls. It incorporates both a bit line conductor and a word line conductor, facilitating advanced signal processing. The design includes a signal storage node consisting of a first electrode, a second electrode situated within the trench, and a node dielectric positioned between these electrodes. Key elements of his invention also comprise a signal transfer device equipped with an annular signal transfer region, diffusion regions to couple critical components, and a protective gate insulator with an associated gate conductor. These features are designed to effectively reduce floating body effects, underscoring the technical sophistication of Agahi's work.
Career Highlights
Agahi has an impressive background, having worked with eminent companies such as IBM and Infineon Technologies North America Corporation. His tenure in these organizations has enabled him to collaborate on groundbreaking technologies, further establishing his reputation as a leading inventor in the sector of memory devices.
Collaborations
Throughout his career, Agahi has had the privilege of working alongside distinguished colleagues including Louis L. Hsu and Jack Allan Mandelman. These collaborations have fostered a rich environment for innovation and have significantly contributed to advancements in memory technology.
Conclusion
Farid Agahi's contributions to the field of memory devices exemplify the spirit of innovation. With multiple patents under his belt, his work continues to pave the way for advancements in DRAM technology and enhances the capabilities of electronic memory storage solutions. As technology evolves, Agahi remains a prominent figure in the pursuit of innovative solutions within the tech industry.