The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2000
Filed:
Feb. 05, 1999
Farid Agahi, Austin, TX (US);
Gary Bronner, Stormville, NY (US);
Bertrand Flietner, Hopewell Junction, NY (US);
Erwin Hammerl, Zangberg, DE;
Herbert Ho, New Windsor, NY (US);
Radhika Srinivasan, Mahwah, NJ (US);
International Business Machines Corporation, Armonk, NY (US);
Infineon Technologies North America Corp., San Jose, CA (US);
Abstract
A reduction in parasitic leakages of shallow trench isolation vias is disclosed wherein the distance between the silicon nitride liner and the active silicon sidewalls is increased by depositing an insulating oxide layer prior to deposition of the silicon nitride liner. Preferably, the insulating oxide layer comprises tetraethylorthosilicate. The method comprises of etching one or more shallow trench isolations into a semiconductor wafer; depositing an insulating oxide layer into the trench; growing a thermal oxide in the trench; and depositing a silicon nitride liner in the trench. The thermal oxide may be grown prior to or after deposition of the insulating oxide layer.