This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignees: Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation. Active years: 2019.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2019
Title: Innovations of Fangyuan Xiao in Semiconductor Manufacturing
Introduction
Fangyuan Xiao is a notable inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative patent. His work focuses on enhancing the efficiency and effectiveness of semiconductor devices.
Latest Patents
Fangyuan Xiao holds a patent for a method titled "Fin cut process and fin structure." This invention involves a manufacturing process for semiconductor devices that includes a substrate structure with semiconductor fins extending in a specific direction. The method outlines the steps of providing a hardmask layer, etching regions, and forming a mask layer, ultimately leading to improved semiconductor device fabrication.
Career Highlights
Throughout his career, Fangyuan Xiao has worked with prominent companies in the semiconductor industry. He has been associated with Semiconductor Manufacturing International (Shanghai) Corporation and Semiconductor Manufacturing International (Beijing) Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology.
Collaborations
Fangyuan Xiao has collaborated with several professionals in his field, including Hai Yang Zhang and Yan Wang. These collaborations have likely enriched his work and contributed to advancements in semiconductor manufacturing.
Conclusion
Fangyuan Xiao's contributions to semiconductor manufacturing through his innovative patent and career experiences highlight his role as a significant inventor in the industry. His work continues to influence the development of semiconductor technologies.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile