Company Filing History:
Years Active: 2017
Title: Innovations of Fang-Yi Liu in FinFET Technology
Introduction: Fang-Yi Liu is a notable inventor based in Pingtung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing processes of fin-shaped field effect transistors (FinFETs). His innovative approaches have the potential to enhance the performance and efficiency of electronic devices.
Latest Patents: Fang-Yi Liu holds a patent titled "Method for tuning metal gate work function before contact formation in fin-shaped field effect transistor manufacturing process." This invention provides a method for tuning the work function of a metal gate structure prior to contact formation in FinFETs. The process involves several steps, including providing a substrate with a metal gate structure, forming a titanium nitride (TiN) layer, and performing gate annealing to achieve the desired work function.
Career Highlights: Liu is currently employed at United Microelectronics Corporation, a leading semiconductor foundry. His work at the company focuses on advancing FinFET technology, which is crucial for the development of next-generation electronic devices. With 1 patent to his name, he has established himself as a key player in the semiconductor industry.
Collaborations: Fang-Yi Liu collaborates with talented colleagues such as Kuo-Chih Lai and Yang-Ju Lu. Their combined expertise contributes to the innovative projects at United Microelectronics Corporation.
Conclusion: Fang-Yi Liu's contributions to FinFET technology exemplify the importance of innovation in the semiconductor industry. His patent and ongoing work at United Microelectronics Corporation highlight his role in shaping the future of electronic devices.