The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
May. 13, 2015
United Microelectronics Corporation, Hsinchu, TW;
Kuo-Chih Lai, Tainan, TW;
Yang-Ju Lu, Changhua, TW;
Ching-Yun Chang, Huwei Township, TW;
Yen-Chen Chen, Tainan, TW;
Shih-Min Chou, Tainan, TW;
Yun Tzu Chang, Kaohsiung, TW;
Fang-Yi Liu, Pingtung, TW;
Hsiang-Chieh Yen, Magong, TW;
Nien-Ting Ho, Tainan, TW;
UNITED MICROELECTRONICS CORPORATION, Hsinchu, TW;
Abstract
The present invention provides a method for metal gate work function tuning before contact formation in a fin-shaped field effect transistor (FinFET), where in the method comprises the following steps. (S) providing a substrate having a metal gate structure on a side of the substrate, (S) forming a titanium nitride (TiN) layer on the side of the substrate, and (S) performing a gate annealing to tune work function of the metal gate structure.