Hsinchu, Taiwan

Fan-Cheng Lin

This inventor holds 2 USPTO granted patents and 2 published patent applications. Top assignees: Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2025-2026.

USPTO Granted Patents = 2 

% Patents Active = 50.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025-2026

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2 patents (USPTO):Explore Patents

Title: Innovations by Fan-Cheng Lin in Semiconductor Technology

Introduction

Fan-Cheng Lin is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique method for forming semiconductor devices.

Latest Patents

Fan-Cheng Lin holds a patent for a method titled "Method for forming semiconductor device with monoclinic crystalline metal oxide capping layer." This method involves several intricate steps, including the formation of a semiconductor fin, the deposition of metal oxide layers, and the transformation of these layers from amorphous to crystalline structures through an annealing process. This innovative approach enhances the performance and reliability of semiconductor devices.

Career Highlights

Fan-Cheng Lin is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this prestigious company has allowed him to push the boundaries of semiconductor technology and contribute to advancements in the field.

Collaborations

He has collaborated with talented coworkers, including Po-Kai Hsiao and Tsai-Yu Huang. Their combined expertise has fostered a productive environment for innovation and development.

Conclusion

Fan-Cheng Lin's contributions to semiconductor technology exemplify the spirit of innovation. His patented methods are paving the way for future advancements in the industry.

Profile summary based on public USPTO records.
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