Taiwan Semiconductor Manufacturing Comp. Ltd.

Fan-Cheng Lin

Yee-Chia Yeo

Huicheng Chang

Tsai-Yu Huang

Po-Kai Hsiao

A method includes forming a semiconductor fin protruding over a substrate; forming an isolation structure over the substrate; depositing a first metal oxide layer over the isolation structure; depositing a first oxide layer over the first metal oxide layer; depositing a second metal oxide layer over the first oxide layer, in which the first metal oxide layer and the second metal oxide layer comprise amorphous structures; performing a chemical mechanism polishing (CMP) process to the first metal oxide layer, the first oxide layer, and the second metal oxide layer; after the CMP process is completed, performing an annealing process such that the first metal oxide layer and the second metal oxide layer are transferred from the amorphous structures into crystalline structures; forming a gate structure over the semiconductor fin; and forming source/drain structures over the substrate and on opposite sides of the gate structure.

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Hsinchu, Taiwan

Fan-Cheng Lin