Falko Höhnsdorf

Title: Falko Höhnsdorf: Innovator in Semiconductor Technology

Introduction

Falko Höhnsdorf is a prominent inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to etching processes and semiconductor structures.

Latest Patents

Höhnsdorf's latest patents include a process for etching a metal layer system. This invention relates to a method that involves a first aluminum-containing layer, a second aluminum-containing layer, and an interlayer suitable for end-point detection. The etching process consists of alternating between two etching steps based on the detection of the interlayer.

Another notable patent is focused on creating a compact semiconductor structure. This method aims to reduce capacitative coupling between interconnects by producing an insulating layer on a semiconductor substrate, etching trenches, and forming metallic interconnects. The process ensures that the interconnects project above the insulating layer, enhancing the overall performance of the semiconductor device.

Career Highlights

Falko Höhnsdorf is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. His work at Infineon has allowed him to apply his innovative ideas in a practical setting, contributing to advancements in the industry.

Collaborations

Throughout his career, Höhnsdorf has collaborated with notable colleagues, including Jens Bachmann and Ulrich Baier. These collaborations have fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Falko Höhnsdorf is a distinguished inventor whose work in semiconductor technology has led to significant advancements in the field. His innovative patents and contributions to Infineon Technologies AG highlight his commitment to pushing the boundaries of technology.