The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2005
Filed:
Nov. 28, 2001
Falko Höhnsdorf, Dresden, DE;
Albrecht Kieslich, Radebuel, DE;
Detlef Weber, Hermsdorf, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A method for reducing capacitative coupling between interconnects on a semiconductor structure includes producing a first insulating layer on a semiconductor substrate and etching trenches in the first insulating layer. Metallic interconnects are formed in the trenches by metallization. The semiconductor structure is polished to remove metal from the first insulating layer, leaving behind metal in the trenches. A portion of the first insulating layer between the first and second metallic interconnects is etched so that the first and second metallic interconnects project above the first insulating layer. A second insulating layer is applied on the substrate such that the metallic interconnects project into the second insulating layer. The second insulating layer has a relative permittivity that is lower than the relative permittivity of the first insulating layer.