Company Filing History:
Years Active: 2020-2021
Title: Fahmida Ferdousi: Innovator in Semiconductor Technology
Introduction
Fahmida Ferdousi is a prominent inventor based in Hillsboro, OR (US). She has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. Her work focuses on innovative designs that enhance the performance and efficiency of semiconductor devices.
Latest Patents
Fahmida's latest patents include advancements in non-planar semiconductor devices featuring hybrid geometry-based active regions. These devices incorporate a hybrid channel region that consists of a nanowire portion situated above an omega-FET portion, which is in turn positioned above a fin-FET portion. The design includes a gate stack that is placed on the exposed surfaces of the hybrid channel region, comprising a gate dielectric layer and a gate electrode. Additionally, source and drain regions are strategically located on either side of the hybrid channel region, showcasing her innovative approach to semiconductor design.
Career Highlights
Throughout her career, Fahmida has worked with leading technology companies, including Intel Corporation and Google Inc. Her experience in these organizations has allowed her to collaborate with some of the brightest minds in the industry, further enhancing her expertise in semiconductor technology.
Collaborations
Fahmida has had the opportunity to work alongside talented colleagues such as Seiyon Kim and Rafael Rios. These collaborations have contributed to her success and the advancement of her innovative projects.
Conclusion
Fahmida Ferdousi is a trailblazer in the semiconductor industry, with a focus on developing cutting-edge technologies that push the boundaries of innovation. Her contributions and patents reflect her dedication to advancing the field and her impact on future technological developments.