This inventor holds 2 USPTO granted patents. Top assignee: Micron Technology Incorporated. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Fabrizio Fiorenza: Innovator in Memory Device Technology
Introduction
Fabrizio Fiorenza is a notable inventor based in Giugliano in Campania, Italy. He has made significant contributions to the field of memory devices, particularly through his innovative patent that enhances device performance.
Latest Patents
Fiorenza holds a patent titled "MNAND field to predict device performance." This invention involves a memory device that includes a memory array and a memory control unit. The memory array consists of memory cells, while the memory control unit is designed to calculate the amount of data that can be written by a host device to the memory device in a burst performance mode before transitioning to sustained performance mode. Additionally, it calculates the amount of data that can be written in sustained performance mode before switching to a dirty performance mode. The results of these calculations are then provided to the host device. He has 1 patent to his name.
Career Highlights
Fabrizio Fiorenza is currently employed at Micron Technology Incorporated, where he continues to develop cutting-edge memory technologies. His work has been instrumental in advancing the capabilities of memory devices, making them more efficient and reliable.
Collaborations
Fiorenza collaborates with talented individuals in his field, including coworkers Nicola Colella and Gianluca Coppola. Their combined expertise contributes to the innovative environment at Micron Technology.
Conclusion
Fabrizio Fiorenza is a prominent figure in the realm of memory device innovation. His contributions, particularly through his patent, demonstrate his commitment to enhancing technology in this critical area.