Saratoga Springs, NY, United States of America

Fabio D'Addamio


Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2017

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1 patent (USPTO):

Title: Innovations by Fabio D'Addamio

Introduction

Fabio D'Addamio is a notable inventor based in Saratoga Springs, NY (US). He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the performance and efficiency of electronic devices.

Latest Patents

D'Addamio holds a patent for "Devices comprising high-K dielectric layer and methods of forming same." This patent describes a semiconductor device that includes a semiconductor substrate and a high-k dielectric layer that is between 10 to 40 Å thick. The layer contains hafnium dioxide (HfO) and zirconium dioxide (ZrO), which are crucial for improving the device's performance. The patent also outlines methods for creating the semiconductor device and the electronic devices that utilize it.

Career Highlights

Fabio D'Addamio has made a mark in the semiconductor industry through his innovative work. He is currently associated with GlobalFoundries Inc., a leading company in semiconductor manufacturing. His expertise in high-k dielectric materials has positioned him as a valuable asset in the field.

Collaborations

D'Addamio has collaborated with several professionals in his field, including Shishir K Ray and Yiqun Liu. These collaborations have contributed to the advancement of semiconductor technologies and the development of new methods in the industry.

Conclusion

Fabio D'Addamio's contributions to semiconductor technology through his patent and collaborations highlight his role as an influential inventor. His work continues to impact the development of electronic devices, showcasing the importance of innovation in this field.

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