The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Mar. 24, 2015
Globalfoundries Inc., Grand Cayman, KY;
Shishir Ray, Clifton Park, NY (US);
Yiqun Liu, Ashburn, VA (US);
Jin Ping Liu, Ballston Lake, NY (US);
Fabio D'Addamio, Saratoga Springs, NY (US);
Sandeep Gaan, Clifton Park, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Provided is a semiconductor device that includes a semiconductor substrate and a 10 to 40 Å thick high-k dielectric layer that contains one or both of hafnium dioxide (HfO) and zirconium dioxide (ZrO). The high-k dielectric layer is disposed on the semiconductor substrate, and it contains at least some tetragonal phase HfOand/or tetragonal phase ZrO. Also provided are methods for making the semiconductor device, and electronic devices that employ the semiconductor device.