Fabienne Rerat

Title: Fabienne Rerat: Innovator in Semiconductor Technology

Introduction

Fabienne Rerat is a prominent inventor based in Grenoble, France. She has made significant contributions to the field of semiconductor technology, particularly in the design of integrated circuits. With a total of 2 patents to her name, Rerat continues to push the boundaries of innovation in her field.

Latest Patents

Rerat's latest patents focus on the integrated structure of inductances with shared values on a semiconductor substrate. These patents describe an integrated circuit designed to operate at frequencies exceeding several hundreds of MHz. The first inductance is formed by a conductive track, with terminals connected to each end of the track. The second inductance is created by the conductive track between the second terminal and an intermediary point connected to a third terminal. This innovative design includes means for setting the third terminal to high impedance when the first inductance is in use.

Career Highlights

Fabienne Rerat is currently employed at STMicroelectronics S.A., a leading company in semiconductor solutions. Her work at STMicroelectronics has allowed her to collaborate with other talented professionals in the industry, further enhancing her expertise and contributions to technology.

Collaborations

One of her notable coworkers is Armand Castillejo, with whom she has worked closely on various projects. Their collaboration has led to advancements in the development of integrated circuits and semiconductor technologies.

Conclusion

Fabienne Rerat is a trailblazer in the semiconductor industry, with her innovative patents and contributions to integrated circuit design. Her work continues to influence the field and inspire future advancements in technology.