Company Filing History:
Years Active: 2019-2022
Title: Fabien Deprat: Innovator in Bipolar Transistor Technology
Introduction
Fabien Deprat is a notable inventor based in Chambery, France. He has made significant contributions to the field of semiconductor technology, particularly in the development of bipolar transistors. With a total of two patents to his name, Deprat's work showcases his expertise and innovative spirit.
Latest Patents
Deprat's latest patents include a method for manufacturing a bipolar transistor and a bipolar transistor capable of being obtained by such a method. The first patent describes a method that involves forming a stack of insulating layers on a substrate, creating an opening to reach the substrate, and using an epitaxial process to form the collector of the transistor. The intrinsic part of the base is formed by epitaxy on the collector, with specific layers providing structural support and isolation. The second patent outlines a cyclic epitaxy process that provides air gap isolation for a bipolar transistor. This process involves creating a collector region, base region, and emitter region within a stack of insulating layers, with a sacrificial layer that is selectively removed to expose the base region.
Career Highlights
Fabien Deprat is currently employed at STMicroelectronics, a leading company in semiconductor solutions. His work at STMicroelectronics has allowed him to push the boundaries of bipolar transistor technology and contribute to advancements in the field.
Collaborations
Throughout his career, Deprat has collaborated with talented individuals such as Alexis Gauthier and Yves Campidelli. These collaborations have fostered an environment of innovation and have led to the successful development of new technologies.
Conclusion
Fabien Deprat's contributions to bipolar transistor technology highlight his role as an influential inventor in the semiconductor industry. His patents reflect a commitment to innovation and excellence in engineering.