Moscow, Russia

Evgeny Efremovich Malitsky

This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 1978.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Evgeny Efremovich Malitsky. Retrieved from https://idiyas.com/inventor/evgeny-efremovich-malitsky

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 14(Granted Patents)


Company Filing History:

goldMedal1 out of 834,601 
Other
 patents

Years Active: 1978

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1 patent (USPTO):Explore Patents

Title: Evgeny Efremovich Malitsky: Innovator in Semiconductor Technology

Introduction

Evgeny Efremovich Malitsky is a notable inventor based in Moscow, Russia. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs that enhance the functionality of semiconductor devices. His work is characterized by a focus on improving the efficiency and reliability of electronic components.

Latest Patents

Malitsky holds a patent for a semiconductor switching device with a breakdown diode formed in the bottom. This device features a semiconductor crystal comprising sequentially alternate layers of opposite conductivity type. It includes two emitters of different conductivity types, at least one gate base, and another base of opposite conductivity type adjacent to the gate base. Additionally, it has an extra region of conductivity type opposite to the gate base, which is arranged adjacent to the surface of the gate base. A unique aspect of this invention is the recess provided at the point where the additional region extends onto the surface, ensuring that it does not contact the lateral walls of the recess.

Career Highlights

Throughout his career, Malitsky has demonstrated a commitment to advancing semiconductor technology. His innovative designs have paved the way for more efficient electronic devices, contributing to the broader field of electronics and engineering. His patent reflects his expertise and dedication to improving semiconductor performance.

Collaborations

Malitsky has worked alongside notable colleagues such as Nikolai Mikhailovich Belenkov and Anatoly Ivanovich Kurnosov. Their collaborative efforts have further enriched the field of semiconductor technology, leading to advancements that benefit various applications in electronics.

Conclusion

Evgeny Efremovich Malitsky is a distinguished inventor whose work in semiconductor technology has made a lasting impact. His innovative patent showcases his expertise and commitment to enhancing electronic devices. His contributions continue to influence the field and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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