The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 1978

Filed:

Jan. 08, 1976
Applicant:
Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 38 ; 357 13 ; 357 39 ; 357 55 ; 357 67 ; 357 86 ; 357 89 ;
Abstract

A semiconductor switching device according to the invention has a semiconductor crystal comprising sequentially alternate layers of opposite conductivity type. The device comprises two emitters of different conductivity type, at least one gate base, another base of opposite conductivity type with respect to the first base adjacent to the gate base, and an additional region of conductivity type opposite to the gate base which is adjacent to the surface of the gate base and arranged completely or partially in the gate base. At a point where the additional region extends onto the surface, there is provided a recess the bottom area of which exceeds that of the exposed part of the additional area, so that this part is disposed within the bottom area of the recess without contacting the lateral walls of the recess.


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Belenkov, Nikolai. (1978). Semiconductor switching device with breakdown diode formed in the bottom (U.S. Patent No. 4109274). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4109274

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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