Moscow, Russia

Anatoly Ivanovich Kurnosov

This inventor holds 3 USPTO granted patents. Top assignee: Other. Active years: 1976-1978.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Anatoly Ivanovich Kurnosov. Retrieved from https://idiyas.com/inventor/anatoly-ivanovich-kurnosov

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.8

ph-index = 3

Forward Citations = 28(Granted Patents)


Company Filing History:

goldMedal3 out of 834,601 
Other
 patents

Years Active: 1976-1978

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3 patents (USPTO):Explore Patents

Title: The Innovations of Anatoly Ivanovich Kurnosov

Introduction

Anatoly Ivanovich Kurnosov is a notable inventor based in Moscow, Russia. He has made significant contributions to the field of semiconductor technology. With a total of 3 patents to his name, Kurnosov's work has advanced the understanding and application of semiconductor devices.

Latest Patents

Kurnosov's latest patents include a semiconductor switching device with a breakdown diode formed in the bottom. This innovative device features a semiconductor crystal comprising sequentially alternate layers of opposite conductivity type. It includes two emitters of different conductivity types, at least one gate base, and an additional region of conductivity type opposite to the gate base. The design ensures that the additional region is disposed within a recess, enhancing the device's functionality.

Another significant patent is a method for manufacturing a semiconductor display device. This method employs a silicon carbide crystal with a first ohmic contact with an n-type region and at least one second ohmic contact with a p-type region. The process involves bombarding the p-type region with ions of an inert gas, which creates an additional region with structure defects, thereby improving the performance of the display device.

Career Highlights

Throughout his career, Kurnosov has focused on developing advanced semiconductor technologies. His innovative approaches have led to the creation of devices that are more efficient and reliable. His work has been recognized within the scientific community, contributing to the advancement of semiconductor applications.

Collaborations

Kurnosov has collaborated with notable colleagues, including Igor Ivanovich Kruglov and Vladimir Ivanovich Kurinny. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Anatoly Ivanovich Kurnosov's contributions to semiconductor technology are significant and impactful. His patents reflect a deep understanding of the complexities of semiconductor devices and their manufacturing processes. Kurnosov continues to be a key figure in the field, driving innovation forward.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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