This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2021.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2021
Title: The Innovative Contributions of Eun-sun Noh
Eun-sun Noh is a prominent inventor based in Yongin-si, South Korea. She has made significant strides in the field of magnetic memory devices, showcasing her expertise and innovative spirit.
Latest Patents
Eun-sun Noh holds a patent for a magnetic memory device. This device includes a buffer layer on a substrate, a magnetic tunnel junction structure featuring a fixed layer structure, a tunnel barrier, and a free layer that are sequentially arranged on the buffer layer. Additionally, it incorporates a spin-orbit torque (SOT) structure on the magnetic tunnel junction structure, which includes a topological insulator material. Notably, the free layer of this device is composed of a Heusler material. This invention highlights her contribution to advancing memory technology.
Career Highlights
Eun-sun Noh is currently employed at Samsung Electronics Co., Ltd., a leading company in technology and innovation. Her work at Samsung has allowed her to be at the forefront of research and development in magnetic memory technologies.
Collaborations
Throughout her career, Eun-sun Noh has collaborated with talented individuals such as Ju-hyun Kim and Joon-Myoung Lee. These collaborations have further enriched her research and contributed to the success of her projects.
Conclusion
Eun-sun Noh's contributions to the field of magnetic memory devices exemplify her innovative spirit and dedication to advancing technology. Her work continues to influence the industry and inspire future innovations.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile