The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Jul. 16, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Eun-sun Noh, Yongin-si, KR;
Ju-hyun Kim, Yongin-si, KR;
Joon-myoung Lee, Anyang-si, KR;
Woo-chang Lim, Seongnam-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/04 (2006.01); H01L 27/22 (2006.01); H01L 43/06 (2006.01); H01L 43/10 (2006.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H01F 41/30 (2006.01); G11C 11/18 (2006.01); H01L 43/14 (2006.01);
U.S. Cl.
CPC ...
H01L 43/04 (2013.01); G11C 11/161 (2013.01); G11C 11/18 (2013.01); H01F 10/329 (2013.01); H01F 10/3272 (2013.01); H01F 41/302 (2013.01); H01L 27/224 (2013.01); H01L 27/228 (2013.01); H01L 43/06 (2013.01); H01L 43/10 (2013.01); H01L 43/14 (2013.01); H01F 10/3286 (2013.01);
Abstract
A magnetic memory device includes a buffer layer on a substrate, a magnetic tunnel junction structure including a fixed layer structure, a tunnel barrier, and a free layer that are sequentially arranged on the buffer layer, and a spin-orbit torque (SOT) structure on the magnetic tunnel junction structure and including a topological insulator material, wherein the free layer includes a Heusler material.