Suwon, South Korea

Euihyun Kim

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Sdi Co., Inc.. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Euihyun Kim. Retrieved from https://idiyas.com/inventor/euihyun-kim-zyvxgf6f

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 10.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Euihyun Kim: Innovator in Silica Layer Technology

Introduction

Euihyun Kim is a notable inventor based in Suwon, South Korea. He has made significant contributions to the field of electronic devices through his innovative work on silica layers. His expertise and creativity have led to the development of a unique composition that enhances electronic device performance.

Latest Patents

Euihyun Kim holds a patent for a "Composition for forming silica layer, silica layer and electronic device incorporating silica layer." This invention discloses a composition that includes perhydropolysilazane (PHPS) and a solvent. The patent details specific ratios and areas in the NMR spectrum that are crucial for the effectiveness of the silica layer.

Career Highlights

Euihyun Kim is currently employed at Samsung SDI Co., Inc., where he continues to push the boundaries of technology. His work has been instrumental in advancing the capabilities of electronic devices, making them more efficient and reliable.

Collaborations

He has collaborated with talented coworkers, including Hyeonsu Jo and Taeksoo Kwak, to further enhance the research and development of silica layer technologies.

Conclusion

Euihyun Kim's contributions to the field of electronic devices through his innovative silica layer composition exemplify the impact of dedicated inventors in technology. His work continues to influence advancements in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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