Eugene F Lyons

Title: The Innovations of Eugene F. Lyons

Introduction

Eugene F. Lyons is a notable inventor based in Santee, California. He has made significant contributions to the field of semiconductor technology, particularly in the development of radiation-hardened devices. With a total of 3 patents to his name, Lyons continues to push the boundaries of innovation in his field.

Latest Patents

Among his latest patents is the "Radiation-hardened silicon-on-insulator CMOS device, and method of making the same." This invention features a silicon-on-insulator metal oxide semiconductor device that comprises an ultrathin silicon-on-sapphire substrate. It includes at least one P-channel MOS transistor formed in the ultrathin silicon layer, with N-type impurity implanted within both the ultrathin silicon layer and the sapphire substrate. The design ensures that the peak N-type impurity concentration in the sapphire layer is greater than that in the ultrathin silicon layer. This innovative approach enhances the device's resilience to radiation, making it suitable for various applications.

Career Highlights

Eugene F. Lyons is currently associated with Peregrine Semiconductor Corporation, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of CMOS devices, particularly in environments where radiation exposure is a concern.

Collaborations

Throughout his career, Lyons has collaborated with talented individuals such as Michael Andrew Stuber and Anthony Mark Miscione. These partnerships have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Eugene F. Lyons exemplifies the spirit of innovation in the semiconductor industry. His contributions, particularly in radiation-hardened devices, highlight his commitment to advancing technology. With a strong foundation of patents and collaborations, Lyons continues to be a significant figure in his field.