The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2003
Filed:
Apr. 05, 2001
Applicant:
Inventors:
James S. Cable, San Diego, CA (US);
Eugene F. Lyons, Santee, CA (US);
Michael A. Stuber, Carlsbad, CA (US);
Mark L. Burgener, San Diego, CA (US);
Assignee:
Peregrine Semiconductor Corporation, San Diego, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/701 ;
U.S. Cl.
CPC ...
H01L 2/701 ;
Abstract
A method for eliminating the radiation-induced off-state current in the P-channel ultrathin silicon-on-sapphire transistor, by providing a retrograde dopant concentration profile that has the effect of moving the Fermi level at the back of the device away from that part of the bandgap where the interface states are located. When the Fermi level does not swing through this area in any region of operation of the device, subthreshold stretchout of the I-V curves does not occur.