The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2008
Filed:
May. 13, 2004
Anthony M. Miscione, Ramona, CA (US);
George Imthurn, San Diego, CA (US);
Eugene F. Lyons, Santee, CA (US);
Michael A. Stuber, Carlsbad, CA (US);
Anthony M. Miscione, Ramona, CA (US);
George Imthurn, San Diego, CA (US);
Eugene F. Lyons, Santee, CA (US);
Michael A. Stuber, Carlsbad, CA (US);
Peregrine Semiconductor Corporation, San Diego, CA (US);
Abstract
A silicon-on-insulator metal oxide semiconductor device comprising ultrathin silicon-on-sapphire substrate; at least one P-channel MOS transistor formed in the ultrathin silicon layer; and N-type impurity implanted within the ultrathin silicon layer and the sapphire substrate such that peak N-type impurity concentration in the sapphire layer is greater than peak impurity concentration in the ultrathin silicon layer.