Esther Frederick

Title: Esther Frederick: Innovator in Area Selective Deposition Technology

Introduction

Esther Frederick is a notable inventor based in Columbia, MD (US). She has made significant contributions to the field of atomic layer deposition (ALD) technology. With a focus on innovative processes, her work has implications for various applications in materials science and engineering.

Latest Patents

Esther Frederick holds 1 patents. One of her key patents is titled "Area selective deposition templated by hydrogen and halogen resists." This patent discloses a process for area selective atomic layer deposition at the near atomic scale, specifically below 10 nm. The process involves cleaning a substrate surface and terminating it with hydrogen. A pattern is then written on the hydrogen-terminated surface using scanning tunneling microscope lithography. The depassivated regions are exposed to a halogen flux, while the passivated regions undergo a functionalization process. This innovative approach allows for selective growth during the ALD process, with growth occurring only in the non-functionalized regions.

Career Highlights

Throughout her career, Esther Frederick has worked with esteemed organizations, including the Government of the United States as represented by the Director of the National Security Agency and National Technology & Engineering Solutions of Sandia, LLC. Her expertise in ALD technology has positioned her as a leader in her field.

Collaborations

Esther has collaborated with notable professionals, including Scott William Schmucker and David R. Wheeler. These collaborations have further enhanced her research and development efforts in the area of atomic layer deposition.

Conclusion

Esther Frederick's contributions to the field of atomic layer deposition technology demonstrate her innovative spirit and dedication to advancing scientific knowledge. Her patents and collaborations reflect her significant impact on the industry.