Erwin Schroer

Title: The Innovations of Erwin Schroer

Introduction

Erwin Schroer is a notable inventor based in Catania, Italy. He has made significant contributions to the field of semiconductor technology, particularly in memory devices. His innovative work has led to the development of a unique charge-trapping memory device.

Latest Patents

Schroer holds a patent for a charge-trapping memory device. This invention features an oxidized region arranged between a substrate of semiconductor material and a nitride liner. The nitride liner covers wordline stacks of a memory cell array and intermediate areas of the substrate. It serves to separate the nitride liner from both the substrate and a memory layer sequence of dielectric materials designed for charge-trapping. Additionally, the nitride liner functions as an etching stop layer during the formation of sidewall spacers used in the peripheral area to produce source/drain junctions of transistors in the addressing circuitry.

Career Highlights

Erwin Schroer is currently employed at Infineon Technologies AG, where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in advancing memory technology, which is crucial for modern electronic devices.

Collaborations

Throughout his career, Schroer has collaborated with esteemed colleagues, including Ricardo Pablo Mikalo and Günther Wein. These partnerships have fostered a creative environment that encourages the exchange of ideas and technological advancements.

Conclusion

Erwin Schroer's contributions to the field of semiconductor technology, particularly through his charge-trapping memory device, highlight his innovative spirit and dedication to advancing electronic memory solutions. His work at Infineon Technologies AG continues to influence the industry significantly.