The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2006
Filed:
May. 31, 2005
Ricardo Pablo Mikalo, Waltersdorf, DE;
Erwin Schroer, Catania, IT;
Günther Wein, Nittendorf, DE;
Jens-uwe Sachse, Dresden, DE;
Mark Isler, Dresden, DE;
Jan-malte Schley, München, DE;
Christoph Andreas Kleint, Dresden, DE;
Ricardo Pablo Mikalo, Waltersdorf, DE;
Erwin Schroer, Catania, IT;
Günther Wein, Nittendorf, DE;
Jens-Uwe Sachse, Dresden, DE;
Mark Isler, Dresden, DE;
Jan-Malte Schley, München, DE;
Christoph Andreas Kleint, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
An oxidized region is arranged between a substrate of semiconductor material and a nitride liner, which covers wordline stacks of a memory cell array and intermediate areas of the substrate, and is provided to separate the nitride liner both from the substrate and from a memory layer sequence of dielectric materials that is provided for charge-trapping. The nitride liner is used as an etching stop layer in the formation of sidewall spacers used in a peripheral area to produce source/drain junctions of transistors of the addressing circuitry.