South Plainfield, NJ, United States of America

Ernest Edward La Bate


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 52(Granted Patents)


Company Filing History:


Years Active: 1976

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1 patent (USPTO):Explore Patents

Title: The Innovations of Ernest Edward La Bate

Introduction

Ernest Edward La Bate is a notable inventor recognized for his contributions to semiconductor technology. He is based in South Plainfield, NJ (US) and has made significant advancements in the field of memory structures.

Latest Patents

La Bate holds a patent for a method of fabricating multilayer insulator-semiconductor memory. This innovative approach involves creating a semiconductor-insulator-metal memory structure that incorporates an impurity, such as tungsten, concentrated in the interface region between the insulator layers. The fabrication process includes depositing an oxide of the impurity, like tungsten trioxide, on the exposed insulator layer before constructing the subsequent layer. This method can be effectively achieved through reactive evaporation.

Career Highlights

Throughout his career, La Bate has been associated with Bell Telephone Laboratories, a leading research institution known for its pioneering work in telecommunications and technology. His work has contributed to advancements in memory technology, which are crucial for modern electronic devices.

Collaborations

La Bate has collaborated with esteemed colleagues, including Dawon Kahng and Martin P Lepselter. Their joint efforts have furthered research and development in semiconductor technologies.

Conclusion

Ernest Edward La Bate's innovative work in semiconductor memory fabrication has made a lasting impact on the field. His contributions continue to influence advancements in technology and memory structures.

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