The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 1976

Filed:

Aug. 18, 1975
Applicant:
Inventors:

Dawon Kahng, Bridgewater Township, Somerset County, NJ (US);

Ernest Edward La Bate, South Plainfield, NJ (US);

Martin Paul Lepselter, Summit, NJ (US);

Joseph Raymond Ligenza, Califon, NJ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; B05D / ;
U.S. Cl.
CPC ...
357 23 ; 357 24 ; 357 54 ; 427 85 ; 427126 ; 427255 ;
Abstract

An SI.sub.1 I.sub.2 M (semiconductor-insulator.sub.1 -insulator.sub.2 -metal) memory structure, containing an impurity such as tungsten concentrated in a region including the interface ('I.sub.1 I.sub.2 ') region between the I.sub.1 and I.sub.2 region, is fabricated by depositing an oxide of the impurity, such as tungsten trioxide, on the then exposed, I.sub.1 layer prior to fabricating the I.sub.2 layer. The oxide of the impurity, such as tungsten trioxide, can be advantageously deposited by means of reactive evaporation.


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