Bell Telephone Laboratories

Ernest Edward La Bate

Martin P Lepselter

Dawon Kahng

Joseph Raymond Ligenza

An SI.sub.1 I.sub.2 M (semiconductor-insulator.sub.1 -insulator.sub.2 -metal) memory structure, containing an impurity such as tungsten concentrated in a region including the interface ('I.sub.1 I.sub.2 ') region between the I.sub.1 and I.sub.2 region, is fabricated by depositing an oxide of the impurity, such as tungsten trioxide, on the then exposed, I.sub.1 layer prior to fabricating the I.sub.2 layer. The oxide of the impurity, such as tungsten trioxide, can be advantageously deposited by means of reactive evaporation.

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South Plainfield, NJ, United States of America

Ernest Edward La Bate