Milpitas, CA, United States of America

Ernest D Landi

This inventor holds 1 USPTO granted patent. Top assignee: Avantek, Inc.. Active years: 1990.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ernest D Landi. Retrieved from https://idiyas.com/inventor/ernest-d-landi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 1

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 1990

Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovations of Ernest D. Landi

Introduction

Ernest D. Landi is a notable inventor based in Milpitas, CA (US). He has made significant contributions to the field of radio frequency (RF) technology. His work focuses on enhancing the efficiency and performance of RF amplifiers.

Latest Patents

One of his key patents is for a "High Efficiency High Isolation Amplifier." This invention describes a broadband RF amplifier that boasts high efficiency and high reverse isolation. The design features a common emitter stage connected in a cascode configuration to a common base stage. This innovative setup allows the cascode to drive the common base stage in a push-pull operation, complemented by a common collector stage. This patent showcases his expertise in RF technology and his commitment to advancing the field.

Career Highlights

Ernest D. Landi has worked with Avantek, Inc., where he has applied his skills and knowledge to develop cutting-edge technologies. His experience in the industry has allowed him to contribute to various projects that push the boundaries of RF amplifier design.

Conclusion

Ernest D. Landi's contributions to RF technology, particularly through his patent for a high efficiency high isolation amplifier, highlight his innovative spirit and dedication to advancing the field. His work continues to influence the development of efficient RF amplifiers in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…