Erik Östreng

Title: Erik Östreng: Semiconductor Doping Innovation.

Introduction

Erik Östreng is an inventor based in Espoo, Finland. His patent work includes a semiconductor doping method designed to control the diffusion of dopant substances into a substrate.

Latest Patents

Östreng is associated with 1 patent, titled “Semiconductor Doping Method and an Intermediate Semiconductor Device.” The method deposits a separation layer on a substrate, followed by a mixture material source layer containing a dopant substance. The substrate and deposited layers are then annealed to promote diffusion of the dopant from the source layer into both the substrate and the separation layer.

Career Highlights

Östreng is associated with Beneq Oy, a company working in advanced materials and thin-film technologies. His patented method addresses semiconductor doping through a layered deposition and annealing process.

Collaborations

The provided information identifies Katja Väyrynen and Emma Salmi as Östreng’s coworkers. No further details about their roles or specific collaboration on the patent are available.

Conclusion

Erik Östreng’s patent describes a layered approach to semiconductor doping, combining separation-layer deposition, a dopant-containing source layer, and annealing.