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For the Inventor, By the Inventor

Boise, ID, United States of America

Eric T Stubbs

USPTO Granted Patents = 43

Average Co-Inventor Count = 2.4

ph-index = 10

Forward Citations = 412(Granted Patents)


Company Filing History:

goldMedal43 out of 38,002 
 
Micron Technology Incorporated
 patents

Years Active: 1998-2008

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Areas of Expertise:
Synchronous DRAM
Semiconductor Memory Chip
Delay Locked Loop
Voltage Regulation
High Speed Memory Architecture
On-Chip Testing
Capacitive Coupling
Memory Device Testing
Integrated Circuits
Noise Immunity
Defect Compensation
Voltage-Pulling Device
43 patents (USPTO):Explore Patents
1. 7400544 - [object Object] (2008-07-15),
2. 7274605 - Per-bit set-up and hold time adjustment for double-data rate synchronous DRAM (2007-09-25),
3. 7152143 - Integrated semiconductor memory chip with presence detect data capability (2006-12-19),
4. 7116589 - Per-bit set-up and hold time adjustment for double-data rate synchronous DRAM (2006-10-03),
5. 6959062 - Variable delay line (2005-10-25),
6. 6947341 - Integrated semiconductor memory chip with presence detect data capability (2005-09-20),
7. 6898144 - Actively driven VREF for input buffer noise immunity (2005-05-24),
8. 6882587 - Method of preparing to test a capacitor (2005-04-19),
9. 6862224 - System and method for operating a memory array (2005-03-01),
10. 6838712 - Per-bit set-up and hold time adjustment for double-data rate synchronous DRAM (2005-01-04),
11. 6791381 - Method and apparatus for reducing the lock time of a DLL (2004-09-14),
12. 6778452 - Circuit and method for voltage regulation in a semiconductor device (2004-08-17),
13. 6727739 - Compensation for a delay locked loop (2004-04-27),
14. 6667911 - High speed memory architecture (2003-12-23),
15. 6636093 - Compensation for a delay locked loop (2003-10-21),

Eric T Stubbs: An Inventor with 27 Patents

Eric T Stubbs is a well-known inventor who has made significant contributions in the field of semiconductor memory devices. He is based in Boise, ID (US) and has a remarkable track record of 27 patents to his name. His innovation and creativity in developing new technologies and improving existing ones have made him a respected figure in the industry.

Stubbs' latest inventions include the design of a memory device that includes a circuit for actively driving a reference voltage and a per-bit set-up and hold time adjustment for double-data rate synchronous DRAM. These patents were a significant improvement for memory devices as they ensured constant voltage and good current drive from the external power supply and enabled optimization on a per-bit basis rather than per-cycle basis, respectively.

Stubbs' contributions haven't gone unnoticed, and he has been working with Micron Technology Incorporated for a long time. The semiconductor products manufacturer recognized his brilliant work and hired him as a Principal Engineer in the Research and Development Department. Micron Technology Incorporated is a reputable American company headquartered in Boise, Idaho, known for its production of DRAM, NAND flash memory, and CMOS image sensing.

Stubbs' fellow colleagues work at the company's R&D department, and two of them stand out: James E Miller, Jr and Gordon D Roberts. These experts work closely with him in shaping the future of memory devices, ensuring that their products meet the ever-changing client demands.

In conclusion, Eric T Stubbs is considered one of the best inventors in memory devices. His numerous patents and latest inventions have been a significant boost in advancing the industry. Micron Technology Incorporated, with whom he works with, is proud to have him on the team, and his contributions have been immensely valuable.

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