Eric T Harley

Title: Eric T Harley: Innovator in Fin-Type Transistor Technology

Introduction

Eric T Harley is a notable inventor based in Bel Air, MD (US). He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of fin-type transistors. His innovative approach has led to advancements that enhance the performance and efficiency of these critical components in modern electronics.

Latest Patents

Eric T Harley holds a patent for a "Conformal buffer layer in source and drain regions of fin-type transistors." This patent outlines a method for fabricating fin-type transistors that includes providing a gate structure extending over a fin above a substrate. The process involves disposing a protective film conformally over the gate structure and modifying it to form a conformal buffer layer. This layer selectively alters the crystalline structure of the protective film, which is crucial for creating effective source and drain regions in fin-type transistors.

Career Highlights

Eric is currently employed at Globalfoundries Inc., a leading semiconductor manufacturer. His work focuses on improving transistor fabrication methods, which are essential for the development of advanced electronic devices. His expertise in this area has positioned him as a valuable asset to his company and the industry at large.

Collaborations

Throughout his career, Eric has collaborated with talented individuals such as Christopher D Sheraw and Chengwen Pei. These partnerships have fostered innovation and have contributed to the successful development of new technologies in the semiconductor field.

Conclusion

Eric T Harley's contributions to fin-type transistor technology exemplify the impact of innovative thinking in the semiconductor industry. His patent and collaborative efforts highlight the importance of advancements in this field, paving the way for future developments in electronics.