Globalfoundries Inc.

Eric T Harley

Chengwen Pei

Henry K Utomo

Zhibin Ren

Christopher D Sheraw

Yue Ke

Yinxiao Yang

Fin-type transistor fabrication methods and structures are provided which include, for example, providing a gate structure extending at least partially over a fin extended above a substrate structure, the gate structure being disposed adjacent to at least one region of the fin; disposing a protective film conformally over the gate structure and over the at least one region; modifying the protective film over the at least one region of the fin to form a conformal buffer layer, wherein the modifying selectively alters a crystalline structure of the protective film over the at least one region which thereby becomes the conformal buffer layer, without altering the crystalline structure of the protective film disposed over the gate structure; and removing the un-altered protective film over the gate structure, leaving the conformal buffer layer over the at least one region to form a source region and a drain region of the fin-type transistor.

Growing community of inventors

Bel Air, MD, United States of America

Eric T Harley