This inventor holds 1 USPTO granted patent. Top assignee: Motorola Corporation. Active years: 1999.
Company Filing History:
Years Active: 1999
Title: The Innovations of Eric Scott Carman
Introduction
Eric Scott Carman is a notable inventor based in Toulouse, France. He has made significant contributions to the field of nonvolatile memory devices. His work has been recognized through the granting of a patent, showcasing his innovative approach to technology.
Latest Patents
Carman holds a patent for a "Single level gate nonvolatile memory device and method for accessing the." This invention involves a single level gate NVM device that includes a floating gate FET and a capacitor fabricated in two P-wells formed in an N-epitaxial layer on a P-substrate. The design incorporates P+ sinkers and N-type buried layers to provide isolation between the two P-wells. The NVM device is programmed or erased by biasing the FET and the capacitor to move charge carriers onto or away from a conductive layer that serves as a floating gate of the FET. Data is read from the NVM device by sensing a current flowing in the FET while applying a reading voltage to the capacitor.
Career Highlights
Carman is currently employed at Motorola Corporation, where he continues to innovate in the field of memory technology. His work has contributed to advancements in nonvolatile memory devices, which are crucial for modern electronic applications.
Collaborations
Throughout his career, Carman has collaborated with notable colleagues, including Patrice M Parris and Yee-Chaung See. These collaborations have likely enhanced the development and refinement of his inventions.
Conclusion
Eric Scott Carman's contributions to the field of nonvolatile memory technology exemplify the spirit of innovation. His patent reflects a significant advancement in memory device design, and his work at Motorola Corporation continues to influence the industry.