Ulsan, South Korea

Eric S Larsen

This inventor holds 1 USPTO granted patent. Top assignee: Korea Institute of Science and Technology. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eric S Larsen. Retrieved from https://idiyas.com/inventor/eric-s-larsen-vmdbc4eh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 11.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Innovations of Eric S. Larsen in Semiconductor Technology

Introduction

Eric S. Larsen is a notable inventor based in Ulsan, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to dielectric layers.

Latest Patents

Eric S. Larsen holds a patent for a dielectric layer and a semiconductor memory device that includes this dielectric layer as a capacitor dielectric layer. This invention provides a dielectric layer that has a rock salt structure in a room temperature stable phase. The dielectric layer is composed of a compound with the chemical formula BeMO, where M includes one of the alkaline earth metals, and x has a value greater than 0 and not greater than 0.19. The semiconductor memory device features a capacitor that consists of a lower electrode, the dielectric layer positioned on the lower electrode, and an upper electrode placed on the dielectric layer.

Career Highlights

Eric S. Larsen is affiliated with the Korea Institute of Science and Technology, where he has been instrumental in advancing research in semiconductor materials. His work has been recognized for its potential applications in improving memory devices.

Collaborations

Some of his notable coworkers include Seong Keun Kim and Woo Chui Lee, who have collaborated with him on various projects related to semiconductor technology.

Conclusion

Eric S. Larsen's innovative work in the field of semiconductor technology, particularly his patent on dielectric layers, showcases his commitment to advancing the industry. His contributions are expected to have a lasting impact on the development of more efficient memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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