The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2022
Filed:
Dec. 19, 2018
Korea Institute of Science and Technology, Seoul, KR;
Institute for Basic Science, Daejeon, KR;
Ulsan National Institute of Science and Technology, Ulsan, KR;
Seong Keun Kim, Seoul, KR;
Woo Chui Lee, Seoul, KR;
Sang Tae Kim, Seoul, KR;
Hyun Cheol Song, Seoul, KR;
Seung Hyub Baek, Seoul, KR;
Ji Won Choi, Seoul, KR;
Jin Sang Kim, Seoul, KR;
Chong Yun Kang, Seoul, KR;
Christopher W. Bielawski, Ulsan, KR;
Jung Hwan Yum, Ulsan, KR;
Eric S. Larsen, Ulsan, KR;
Korea Institute of Science and Technology, Seoul, KR;
Abstract
Provided is a dielectric layer that has a rock salt structure in a room temperature stable phase. The dielectric layer is made of a compound having a chemical formula of BeMO, where M includes one of alkaline earth metals and x has a value greater than 0 and not greater than 0.19. A semiconductor memory device also is provided that includes a capacitor composed of a lower electrode; a dielectric layer disposed on the lower electrode; and an upper electrode disposed on the dielectric layer, wherein the dielectric layer has a rocksalt structure in a room temperature stable phase and is made of a compound having a chemical formula shown below,BeMO,