Jung Hwan Yum

Title: Innovations of Jung Hwan Yum in Semiconductor Technology

Introduction

Jung Hwan Yum is a notable inventor based in Ulsan, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of dielectric materials.

Latest Patents

Jung Hwan Yum holds a patent for a dielectric layer and a semiconductor memory device that includes this dielectric layer as a capacitor dielectric layer. The patent describes a dielectric layer that possesses a rock salt structure in a room temperature stable phase. This dielectric layer is composed of a compound with the chemical formula BeMO, where M represents one of the alkaline earth metals, and x has a value greater than 0 and not exceeding 0.19. The semiconductor memory device includes a capacitor made up of a lower electrode, the dielectric layer positioned on the lower electrode, and an upper electrode placed on the dielectric layer.

Career Highlights

Jung Hwan Yum is affiliated with the Korea Institute of Science and Technology, where he has been involved in cutting-edge research and development in semiconductor materials. His work has contributed to advancements in memory device technology, enhancing the performance and stability of these devices.

Collaborations

Some of his notable coworkers include Seong Keun Kim and Woo Chui Lee, who have collaborated with him on various projects related to semiconductor technology.

Conclusion

Jung Hwan Yum's innovative work in the field of semiconductor technology, particularly his patent on dielectric layers, showcases his expertise and contributions to advancing memory device technology. His research continues to influence the development of more efficient and stable semiconductor devices.