Company Filing History:
Years Active: 2004
Title: Eric N Kaneshiro: Innovator in Heterojunction Bipolar Transistor Technology
Introduction
Eric N Kaneshiro is a notable inventor based in Torrance, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of heterojunction bipolar transistors. With a total of 2 patents, his work has advanced the performance and efficiency of these critical electronic components.
Latest Patents
Kaneshiro's latest patents include innovations that enhance the functionality of heterojunction bipolar transistors. One of his patents focuses on an ultra high-speed heterojunction bipolar transistor featuring a cantilevered base. This design reduces the base to collector capacitance, thereby improving high-frequency performance using existing materials and processes. The method involves undercutting the collector under the base along two parallel sides of the base mesa and providing a sloped collector edge along the remaining two sides. This innovative approach is achieved through selective etching, resulting in a non-rectangular parallelogram orientation of the mesa regions.
Another significant patent is related to an interstitial diffusion barrier in heterojunction bipolar transistors. In this invention, the sub-collector layer is doped with phosphorus, which binds interstitial gallium and prevents it from diffusing to the base layer. This process ensures that beryllium remains undisturbed, maintaining the integrity of the transistor's performance.
Career Highlights
Throughout his career, Kaneshiro has worked with prominent companies in the aerospace and technology sectors. Notable employers include Northrop Grumman Systems Corporation and TRW Limited. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to various innovative projects.
Collaborations
Kaneshiro has collaborated with several talented individuals in his field. Among his coworkers are Augusto L Gutierrez-Aitken and Aaron K Oki, who have also made significant contributions to semiconductor research and development.
Conclusion
Eric N Kaneshiro is a distinguished inventor whose work in heterojunction bipolar transistors has paved the way for advancements in electronic technology. His innovative patents and collaborations reflect his commitment to enhancing the performance of semiconductor devices. His contributions continue to influence the industry and inspire future innovations.