The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2004
Filed:
Sep. 22, 2000
Applicant:
Inventors:
Patrick T. Chin, Marina del Rey, CA (US);
Augusto L. Gutierrez-Aitken, Redondo Beach, CA (US);
Eric N. Kaneshiro, Torrance, CA (US);
Assignee:
TRW Inc., Redondo Beach, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/9737 ;
U.S. Cl.
CPC ...
H01L 2/9737 ;
Abstract
A heterojunction bipolar transistor is doped in the sub-collector layer ( ) with phosphorus ( ). The presence of the phosphorus causes any interstitial gallium ( ) to be bonded ( ) to the phosphorus ( ) and move to a lattice site. The result is that the interstitial gallium does not diffuse to the base layer and thus does not cause the beryllium to be displaced and diffused. Instead of doping with phosphorus, a layer including phosphorus can also be utilized.