Northrop Grumman Systems Corporation

Trw Limited

Eric N Kaneshiro

Augusto L Gutierrez-Aitken

Dwight C Streit

Aaron K Oki

Patrick T Chin

A heterojunction bipolar transistor is doped in the sub-collector layer ( ) with phosphorus ( ). The presence of the phosphorus causes any interstitial gallium ( ) to be bonded ( ) to the phosphorus ( ) and move to a lattice site. The result is that the interstitial gallium does not diffuse to the base layer and thus does not cause the beryllium to be displaced and diffused. Instead of doping with phosphorus, a layer including phosphorus can also be utilized.

Interstitial diffusion barrier

Reduction in the base to collector capacitance of a heterojunction bipolar transistor, and, improved high frequency performance is achieved using existing materials and processes by undercutting the collector ( ) under the base ( ) along two parallel sides of the base mesa ( &mdash;FIG. ), and providing a sloped collector edge ( &mdash;FIG. ) along the remaining two parallel sides of the base. The foregoing is accomplished by selective etching and with the four sides of the mesa regions oriented as a non-rectangular parallelogram ( &mdash;FIG. ) in which one pair of sides is in parallel with one of the said &lsqb; &rsqb; and &lsqb; {overscore (1)}&rsqb; planes of the crystalline structure and the other pair of sides in parallel with one of the &lsqb; &rsqb; and &lsqb; {overscore (1)} {overscore (1)}&rsqb; planes of the crystalline structure.

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Torrance, CA, United States of America

Eric N Kaneshiro