Eric M Jackson

Title: Innovations of Eric M Jackson

Introduction

Eric M Jackson is an accomplished inventor based in Alexandria, VA (US). He has made significant contributions to the field of technology, particularly in the development of advanced semiconductor devices. With a total of 2 patents to his name, Jackson's work showcases his expertise and innovative spirit.

Latest Patents

Jackson's latest patents include "Reticulated Shallow Etch Mesa Isolation" and "CMOS Devices Hardened Against Total Dose Radiation Effects." The first patent describes a device that incorporates an absorber layer deposited on a bottom contact layer, along with a semi-intrinsic layer that has a wider energy gap. This configuration allows for the effective collection of photoexcited minority carriers while blocking the flow of majority carriers. The second patent focuses on a CMOS or NMOS device designed to resist total dose radiation failures. It includes a negative voltage source that applies a steady negative back bias to mitigate leakage currents, enhancing the device's resilience in radiation environments.

Career Highlights

Jackson is currently employed at the USA as represented by the Secretary of the Navy. His work in this capacity has allowed him to contribute to important advancements in technology and innovation. His patents reflect his commitment to improving the performance and reliability of semiconductor devices.

Collaborations

Some of Jackson's notable coworkers include Geoffery Summers and Michael Xapsos. Their collaboration has likely fostered an environment of innovation and creativity, leading to the development of groundbreaking technologies.

Conclusion

Eric M Jackson is a notable inventor whose work has significantly impacted the field of semiconductor technology. His patents demonstrate his innovative approach and dedication to advancing the industry.