Enping Cheng

Title: Enping Cheng: Innovator in Semiconductor Memory Technology

Introduction

Enping Cheng is a notable inventor based in Quanzhou, China. He has made significant contributions to the field of semiconductor memory technology. With a total of two patents to his name, Cheng's work focuses on innovative methods of fabricating semiconductor devices.

Latest Patents

Cheng's latest patents include a method of fabricating semiconductor memory that features a second active region positioned at the outer side of a first active region. This patent describes a semiconductor memory device that comprises a substrate, an active structure, and shallow trench isolation. The active structure is integrated within the substrate and consists of a first active region and a second active region. The first active region is made up of multiple active region units, while the second active region connects directly to a portion of these units. Additionally, the second active region contains several first openings located at its edge. The shallow trench isolation surrounds the active structure within the substrate, enhancing the device's performance.

Career Highlights

Cheng is currently employed at Fujian Jinhua Integrated Circuit Co., Ltd., where he continues to advance semiconductor technology. His expertise in the field has positioned him as a key player in the development of innovative memory devices.

Collaborations

Cheng has worked alongside talented colleagues such as Janbo Zhang and Li-Wei Feng. Their collaborative efforts contribute to the ongoing advancements in semiconductor technology.

Conclusion

Enping Cheng's contributions to semiconductor memory technology highlight his innovative spirit and dedication to advancing the field. His patents reflect a commitment to improving device performance and functionality.