This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Stmicroelectronics Gmbh. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Eng Hui Goh: Semiconductor Passivation Innovation
Introduction
Eng Hui Goh is an inventor associated with Singapore and semiconductor technology. His patent work addresses moisture and proton protection in integrated circuit devices.
Latest Patents
Goh is credited with 1 patent, titled “Passivation Layer for an Integrated Circuit Device That Provides a Moisture and Proton Barrier.” The invention describes a passivation stack comprising tetraethyl orthosilicate (TEOS), phosphorus-doped TEOS (PTEOS), and silicon-rich nitride layers. The TEOS and PTEOS layers cover part of a metal contact’s top surface, while the silicon-rich nitride layer covers both specified surface portions and contacts the uncovered portion. The layered structure is designed to provide a barrier against moisture and protons.
Career Highlights
Goh is associated with STMicroelectronics GmbH. His patent reflects work on protective materials and layer arrangements for integrated circuit devices.
Collaborations
The provided information lists Voon Cheng Ngwan and Fadhillawati Tahir as Goh’s coworkers. Their names are associated with his professional context, though specific collaborative roles in the patent are not stated.
Conclusion
Eng Hui Goh’s patent focuses on a layered passivation structure intended to protect integrated circuit devices from moisture and proton exposure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile