Ellis N Fuls

Title: The Innovations of Ellis N. Fuls

Introduction

Ellis N. Fuls is a notable inventor based in Bernardsville, NJ (US). He has made significant contributions to the field of integrated circuit technology. His work has led to advancements that enhance the performance and efficiency of electronic devices.

Latest Patents

Fuls holds a patent for the "Fabrication of MOS integrated circuit devices." This patent describes a multilayer polysilicon/metallic-silicide gate-level metallization structure that is patterned to form gates and associated interconnects. The design includes interconnects that make contact with ohmic regions in the single-crystalline body of the device. A simplified fabrication procedure is utilized, involving a single implantation step to dope the metallic silicide while also doping selected portions of the body. This process leads to the formation of source, drain, and ohmic contact regions during a subsequent heating step. The dopant in the metallic silicide diffuses into underlying layers of polysilicon, rendering it conductive and forming additional ohmic contact regions in the body.

Career Highlights

Fuls has had a distinguished career at Bell Telephone Laboratories, where he has contributed to various projects and innovations in the field of electronics. His work has been instrumental in advancing the technology behind MOS integrated circuits.

Collaborations

Some of his notable coworkers include Nadia Lifshitz and Sheila Vaidya. Their collaborative efforts have contributed to the success of various projects at Bell Telephone Laboratories.

Conclusion

Ellis N. Fuls is a prominent inventor whose work in the fabrication of MOS integrated circuit devices has had a lasting impact on the electronics industry. His contributions continue to influence the development of advanced technologies.