The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 1984
Filed:
Feb. 18, 1983
Ellis N Fuls, Bernardsville, NJ (US);
Nadia Lifshitz, New Providence, NJ (US);
Sheila Vaidya, Bridgewater, NJ (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
In an MOS integrated circuit device, a multilayer polysilicon/metallic-silicide gate-level metallization structure is patterned to form gates and associated interconnects. Some of the interconnects are designed to make contact with ohmic regions in the single-crystalline body of the device. In accordance with a simplified fabrication procedure, a single implantation step is utilized to dope the metallic silicide while doping selected portions of the body. During a subsequent heating step, source, drain and ohmic contact regions are formed in the body. During the same step, the dopant in the metallic silicide diffuses into underlying layers of polysilicon and into body portions directly underlying polysilicon in amounts sufficient to render the polysilicon conductive and to form additional ohmic contact regions in the body.