Elaine Tierney

Title: Elaine Tierney: Innovator in Silicon Dioxide Deposition

Introduction

Elaine Tierney is a notable inventor based in Danbury, CT (US). She has made significant contributions to the field of materials science, particularly in the deposition of silicon dioxide. Her innovative methods have implications for various applications in the semiconductor industry.

Latest Patents

Elaine Tierney holds a patent for a "Method for depositing high quality silicon dioxide by PECVD." This method describes a process for depositing high-quality silicon dioxide in a plasma-enhanced chemical vapor deposition tool. The reactant gases are introduced into the tool along with a substantial amount of an inert carrier gas. A plasma discharge is established in the tool using a high RF power density, which allows for the deposition of high-quality silicon dioxide at very high deposition rates. In a single wafer tool, the RF power density ranges from 1-4 W/cm², and the deposition rate is between 600-1500 angstroms per minute for depositing high-quality SiO₂ films.

Career Highlights

Elaine has had a distinguished career, working at the International Business Machines Corporation (IBM). Her work has been pivotal in advancing the technology used in semiconductor manufacturing. She has demonstrated a commitment to innovation and excellence in her field.

Collaborations

Elaine has collaborated with various professionals in her field, including her coworker John Batey. These collaborations have contributed to her success and the advancement of technology in silicon deposition.

Conclusion

Elaine Tierney's contributions to the field of silicon dioxide deposition highlight her innovative spirit and dedication to advancing technology. Her patent and work at IBM reflect her significant impact on the semiconductor industry.