The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 1991
Filed:
Nov. 17, 1989
John Batey, Danbury, CT (US);
Elaine Tierney, Danbury, CT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for depositing high quality silicon dioxide in a plasma enhanced chemical vapor deposition tool is described. The reactant gases are introduced into the tool together with a large amount of an inert carrier gas. A plasma discharge is established in tool by using a high RF power density thereby depositing high quality silicon dioxide at very high deposition rates. In a single wafer tool, the RF power density is in the range of 1-4 W/cm.sup.2 and the deposition rate is from 600-1500 angstroms per minute for depositing high quality SiO.sub.2 films.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile