This inventor holds 4 USPTO granted patents. Top assignee: Siemens Aktiengesellschaft. Active years: 1976-1986.
Company Filing History:
Years Active: 1976-1986
Title: The Innovations of Egon Bussmann
Introduction
Egon Bussmann is a notable inventor based in Munich, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work has been instrumental in advancing manufacturing processes and improving the efficiency of semiconductor devices.
Latest Patents
Bussmann's latest patents include innovative methods for preventing lateral oxide growth in semiconductor layer arrangements. This invention addresses the limitations imposed by the thick oxide bird's beak during miniaturization. By utilizing a thin diffusion barrier of silicon nitride, Bussmann's method effectively suppresses the diffusion of oxidizing agents without introducing crystal faults. Additionally, he has developed a process control circuit for metal-depositing baths. This circuit is designed to monitor and control multiple parameters, ensuring precise calibration and dosing in metal-depositing processes.
Career Highlights
Egon Bussmann is currently associated with Siemens Aktiengesellschaft, a leading global technology company. His work at Siemens has allowed him to explore and implement cutting-edge technologies in semiconductor manufacturing. His contributions have not only enhanced the company's capabilities but have also set new standards in the industry.
Collaborations
Throughout his career, Bussmann has collaborated with esteemed colleagues such as Hubert De Steur and Johannes Helder. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Egon Bussmann's contributions to semiconductor technology through his patents and work at Siemens highlight his role as a key innovator in the field. His inventions continue to influence the industry and pave the way for future advancements.